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  • 1200 degree Four Heating Zone Chamber Moving Bridgman Crystal Growth Furnace

1200 degree Four Heating Zone Chamber Moving Bridgman Crystal Growth Furnace

Vertical Bridgman method for single crystal growth or Czochralski method for single crystal growth

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Application

The CHY-1200D-SCD Bridgman single crystal growth furnace can use either the upward pulling method to grow crystals or the crucible descent method to grow crystals. The crucible or seed rod can also rotate itself while lifting, making it suitable for various crystal material growth processes.The temperature control part adopts the latest version of Yudian's temperature controller, with a temperature control accuracy of 0.1 ℃. The lifting transmission mechanism adopts high-performance servo motors, which make the stroke more stable. This device can meet the needs of users to grow high-quality crystals.

Product parameters


Model No.
CHY-1200D-SCD
Heating Zone Length
110+110+110+110mm
Max Working Temper
1150 degree
Thermocouple
K type
Temperature Accuracy
+/-1 degree
Temper Control
PID programmable control
Heating rate
Suggest:10℃/Min
Heating Element
Fe-Cr-Al-Mo wire (OCr27Al7Mo2)
Dipping speed
0.1~100mm/h
Rotating speed
0.1~100r/min
Dipping distance
400mm
Power Supply
AC220/50Hz
Dimension
1000*580*1460mm



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